Platinum-assisted post deposition annealing of the n-Ge/Y2O3 interface. (13th June 2016)

• Record Type: Journal Article
• Authors: Zimmermann, C; Bethge, O; Lutzer, B; Bertagnolli, E
• Is Part Of: Semiconductor science and technology. Volume 31:Number 7(2016:Jul.)
• Publication Date: 2016-06-13
• Subjects: MOS-capacitors -- high-k oxide -- Y2O3 -- Pt-assisted PDA -- XPS -- electrical characterization; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/31/7/075009
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The impact of annealing temperature and annealing duration on the interface properties of n-Ge/Y2 O3 /Pt MOS-capacitors is investigated employing an ultrathin catalytically acting Pt-layer. X-ray photoelectron spectroscopy analysis has been used to verify an enhanced growth of GeO2 and thermally stabilizing yttrium germanate at the n-Ge/Y2 O3 interface induced by an oxygen post deposition annealing (PDA). Especially at 500 °C and 550 °C high quality Ge/Y2 O3 interfaces have been achieved resulting in very low interface trap density of 7.41*10 10 eV −1 cm −2 . It is shown that either a short oxygen annealing at higher temperatures (550 °C) or a long time annealing at lower temperatures (450 °C) are appropriate to realize low interface trap density ( D it ). It turns out that a Pt-assisted PDA in combination with a final PMA are needed to reduce hysteresis width significantly and to bring flat band voltages toward ideal values.