Cite
HARVARD Citation
Góis, M. et al. (2018). Study of Filament Resistive Switching in New Pt/Co0.2TiO3.2/ITO Devices for Application in Non‐Volatile Memory. Physica status solidi. 215 (24), p. n/a. [Online].
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Góis, M. et al. (2018). Study of Filament Resistive Switching in New Pt/Co0.2TiO3.2/ITO Devices for Application in Non‐Volatile Memory. Physica status solidi. 215 (24), p. n/a. [Online].