Study of Filament Resistive Switching in New Pt/Co0.2TiO3.2/ITO Devices for Application in Non‐Volatile Memory. Issue 24 (27th November 2018)

• Record Type: Journal Article
• Authors: Góis, Meirielle M.; Valença, Eduardo; Machado, Rogerio; Lopez, Elvis O.; Mello, Alexandre; Rodrigues, Cleber L.; Macêdo, Marcelo A.
• Is Part Of: Physica status solidi. Volume 215:Issue 24(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-11-27
• Subjects: Co0.2TiO3.2 -- non‐volatile memory -- RBS -- resistive switching -- X‐ray photoelectron emission spectroscopy; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201800369
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : In this work, the authors present a study of the resistive switching effect (RS) in Co0.2 TiO3.2 (CTO) in a thin film structure Pt/CTO/ITO. The identification of a structure of low crystallinity with different deposition times is seen in the diffractograms with a certain tendency of orientation in the plane (311) of the inverted spinel of space group Fd‐3m . Electrical measurements I–V highlight the appearance of RS effect predominated by unipolar filamentary mechanism. The retention of charge in the device shows good stability and separation of HRS‐LRS states with ROFF /RON ≈10 6 ratio. The authors are able to demonstrate that Co0.2 TiO3.2 presents promising performance for application in non‐volatile memories. Abstract : Unipolar resistive switching in a simple Pt/Co0.2 TiO3.2 /ITO device. Initial research on Co0.2 TiO3.2 monolayer exhibiting reproducible transition from a high resistance state to a conductive regime at low voltage. Resistance‐time analyzes show good stability of the charge in the conducting state, presenting six orders of magnitude in the ROFF /RON ratio, indicating its electric character as a new device for RRAM.