Epitaxial growth of Sb-doped Ge layers on ferromagnetic Fe3Si for vertical semiconductor spintronic devices. (26th September 2018)

• Record Type: Journal Article
• Authors: Shiihara, T; Oki, S; Sakai, S; Ikawa, M; Yamada, S; Hamaya, K
• Is Part Of: Semiconductor science and technology. Volume 33:Number 10(2018:Oct.)
• Publication Date: 2018-09-26
• Subjects: germanium -- molecular beam epitaxy -- solid phase epitaxy -- spintronics; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aade71
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: By combining solid phase epitaxy and molecular beam epitaxy with Sb doping, we can form n -type Ge layers on one of the ferromagnetic Heusler alloys, Fe3 Si. Two-dimensional epitaxial growth of the Sb-doped Ge layers can be achieved on the Si-terminated Fe3 Si surface at 175 ◦ C. Electrical properties of the Au-Ti/Sb-doped Ge/Fe3 Si/ p -Ge/Al vertical devices indicate that the Sb-doped Ge layer is an n -type semiconductor. We also show a high-quality CoFe/ n -Ge/Fe3 Si trilayer structure for vertical semiconductor spintronic devices.