Low magnetic field Impact on NBTI degradation. Issue 9 (August 2015)

• Record Type: Journal Article
• Authors: Merah, S.M.; Nadji, B.; Tahi, H.
• Is Part Of: Microelectronics and reliability. Volume 55:Issue 9/10(2015)
• Page Start: 1460
• Page End: 1463
• Publication Date: 2015-08
• Subjects: NBTI -- VDMOSFET -- Magnetic field; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.06.137
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This article presents the effect of low magnetic field (B < 10 mT) on both Negative Bias Temperature Instability (NBTI) stress and recovery. This effect is a study on commercial power double diffused MOS transistors (VDMOSFET). We show that the degradation is less important when the magnetic field is applied. The dynamic of the degradation change and the relaxation is accelerated. These results can give useful insight for understand the NBTI degradation mechanisms. In addition, it could be exploited to improve the VDMOS devices life time. Highlights: The degradation of threshold voltage shift (ΔVth) decreases under magnetic field. The more the magnetic field is important the more ΔVth is low. The dynamic of stress without magnetic field differs from the one with magnetic field. The recovery (relaxation) is accelerated in the presence of magnetic field.