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APA Citation
Lee, J. H., Han, J., Yu, C. G., & Park, J. T. (2015). effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs. Microelectronics and reliability, 55(9), 1456–1459. http://access.bl.uk/ark:/81055/vdc_100051243286.0x000054