Cite
HARVARD Citation
Lee, J. et al. (2015). Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs. Microelectronics and reliability. 55 (9), pp. 1456-1459. [Online].
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Lee, J. et al. (2015). Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs. Microelectronics and reliability. 55 (9), pp. 1456-1459. [Online].