Cite
HARVARD Citation
Rigato, M. et al. (2015). ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. Microelectronics and reliability. 55 (9), pp. 1471-1475. [Online].
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Rigato, M. et al. (2015). ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. Microelectronics and reliability. 55 (9), pp. 1471-1475. [Online].