Improved surface and electrical properties of passivated GaSb with less alkaline sulfide solution. (December 2015)

• Record Type: Journal Article
• Authors: Tao, Dongyan; Cheng, Yu; Liu, Jingming; Su, Jie; Liu, Tong; Yang, Fengyun; Wang, Fenghua; Cao, Kewei; Dong, Zhiyuan; Zhao, Youwen
• Is Part Of: Materials science in semiconductor processing. Volume 40(2015:Dec.)
• Page Start: 685
• Page End: 689
• Publication Date: 2015-12
• Subjects: GaSb -- Sulphurization -- X-ray photoelectron spectroscopy (XPS) -- Native oxides -- Au Schottky barrier diodes (SBDs); Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.07.048
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The surface quality of HCl-etched and ammonium sulfide [(NH4 )2 S]-based treated bulk n -GaSb(100) were compared using x-ray photoelectron spectroscopy (XPS) and TOF-SIMS. It has been found that native oxides present on the GaSb surface are more effectively removed when etched with concentrated HCl solution. With additional [(NH4 )2 SO4 +S] substances or hydrogen ions in the passivation solution, the treated samples displayed significant reduction of native oxides and formation of the sulfides compared with pure (NH4 )2 S solution. The treated samples also result in a noteworthy improvement in the current–voltage ( I – V ) characteristics of Au/ n -GaSb Schottky contacts, as evidenced by the lower ideality factor ( n ), higher barrier height ( Φ b ) and higher rectification ratio at ±0.2 V. The I – V measurement provided definitive confirmation of XPS and TOF-SIMS results, establishing the need for less alkaline solution for greater passivation stability.