Cite
MLA Citation
Timur Malin et al.. “Minority carrier diffusion length in AlxGa1‐xN (x = 0.1) grown by ammonia molecular beam epitaxy.” Physica status solidi, vol. 12, no. 4, n.d., pp. 447–450. http://access.bl.uk/ark:/81055/vdc_100074558653.0x000011