Cite
HARVARD Citation
Malin, T. et al. (n.d.). Minority carrier diffusion length in AlxGa1‐xN (x = 0.1) grown by ammonia molecular beam epitaxy. Physica status solidi. 12 (4), pp. 447-450. [Online].
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Malin, T. et al. (n.d.). Minority carrier diffusion length in AlxGa1‐xN (x = 0.1) grown by ammonia molecular beam epitaxy. Physica status solidi. 12 (4), pp. 447-450. [Online].