Cite
HARVARD Citation
Nakamura, D. et al. (2017). Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals. Applied physics express. p. . [Online].
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Nakamura, D. et al. (2017). Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals. Applied physics express. p. . [Online].