Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals. (29th March 2017)

• Record Type: Journal Article
• Authors: Nakamura, Daisuke; Kimura, Taishi; Horibuchi, Kayo
• Is Part Of: Applied physics express. Volume 10:Number 4(2017)
• Publication Date: 2017-03-29
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.045504
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Here, we propose a halogen-free vapor phase epitaxy (HF-VPE) technique to grow bulk GaN single crystals. This technique employs the simplest reaction for GaN synthesis (reaction of Ga vapor with NH3 ) and can potentially achieve a high growth rate, a prolonged growth duration, a high crystal quality, and a low cost. The analyses of thick HF-VPE-GaN layers grown under optimized growth conditions revealed that high-quality crystals, both in terms of dislocation density and impurity concentration, are obtained at high growth rates of over 100 µm/h.