Cross-section high resolution transmission electron microscopy and nanoprobe investigations of gallium nitride nanowires. (23rd August 2010)

• Record Type: Journal Article
• Authors: Jacobs, Benjamin W.; McElroy, Kaylee; Al-Duhaileb, Raed A.; Crimp, Martin A.; Ayres, Virginia; Stallcup, Richard; Hartman, Adam; Tupta, Mary
• Is Part Of: International journal of nanomanufacturing. Volume 6:Number 1/2/3/4(2010)
• Page Start: 264
• Page End: 278
• Publication Date: 2010-08-23
• Subjects: gallium nitride nanowires -- multiphase nanowires -- internal structure -- transmission electron microscopy -- high resolution TEM -- HRTEM -- focussed ion beam -- FIB -- cross-section -- nanoelectronics -- nanoprobes -- microprobes -- nanotechnology; Nanostructured materials industry -- Periodicals; Nanotechnology -- Periodicals; 620.505
• Languages: English
• ISSNs: 1746-9392

Abstract

Gallium nitride nanowires and rods were grown by a vapour-solid growth mechanism over an 850-1, 000°C furnace growth temperature range. Investigations by parallel (cross-section) high resolution transmission electron microscopy revealed correlated internal structures. The effects of the internal structures on electronic properties were investigated by micro- and nano-probe experiments. A space-charge limited interpretation of the observed non-linear I-V behaviour is examined.