Cross-section high resolution transmission electron microscopy and nanoprobe investigations of gallium nitride nanowires. (23rd August 2010) - Jacobs, Benjamin W.
Gallium nitride nanowires and rods were grown by a vapour-solid growth mechanism over an 850-1, 000°C furnace growth temperature range. Investigations by parallel (cross-section) high resolution transmission electron microscopy revealed correlated internal structures. The effects of the internal structures on electronic properties were investigated by micro- and nano-probe experiments. A space-charge limited interpretation of the observed non-linear I-V behaviour is examined.