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HARVARD Citation
Zhang, J. et al. (2015). 3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment. Microelectronics and reliability. 55 (8), pp. 1180-1186. [Online].
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Zhang, J. et al. (2015). 3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment. Microelectronics and reliability. 55 (8), pp. 1180-1186. [Online].