Normalized differential conductance to study current conduction mechanisms in MOS structures. (December 2018)

• Record Type: Journal Article
• Authors: Nouibat, T.H.; Messai, Z.; Chikouch, D.; Ouennoughi, Z.; Rouag, N.; Rommel, M.; Frey, L.
• Is Part Of: Microelectronics and reliability. Volume 91(2018)Part 2
• Page Start: 183
• Page End: 187
• Publication Date: 2018-12
• Subjects: Normalized Differential Conductance (NDC) -- Conduction mechanism -- Parameter extractions -- MOS device -- Fowler–Nordheim -- Poole–Frenkel; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.10.001
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: In this paper, the conduction mechanisms in MOS structures are investigated using Normalized Differential Conductance (NDC). It is shown that NDC can be applied successfully for the determination of conduction mechanism parameters in MOS devices. The method allows the separation of various components of conduction current and determines the permissible voltage ranges for the determination of the conduction mechanism parameters through the device. The procedure is illustrated by applying it to simulated and experimental current-voltage (I-V) characteristics. The limitations of such parameters extraction are also investigated. A qualitative favorable comparison between experimental data and simulated results is also obtained.