Fabrication and investigation of photosensitive MoOx/n-CdTe heterojunctions. (1st September 2016)

• Record Type: Journal Article
• Authors: Solovan, M M; Gavaleshko, N M; Brus, V V; Mostovyi, A I; Maryanchuk, P D; Tresso, E
• Is Part Of: Semiconductor science and technology. Volume 31:Number 10(2016:Oct.)
• Publication Date: 2016-09-01
• Subjects: MoOx -- CdTe -- heterojunction -- current transport; 71.55.Gs -- 72.80.Ey -- 73.20.Hb -- 73.40.Gk -- 73.40.Lq -- 85.60.Bt; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/31/10/105006
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: MoOx /n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The obtained heterojunctions possessed sharply defined rectifying properties with the rectification ration RR ∼ 10 6 . The temperature dependences of the height of the potential barrier and series resistance of the MoOx /CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases. The analysis of capacitance-voltage ( C – V ) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance.