A terahertz performance of hybrid single walled CNT based amplifier with analytical approach. (January 2018)

• Record Type: Journal Article
• Authors: Kumar, Sandeep; Song, Hanjung
• Is Part Of: Solid-state electronics. Volume 139(2018)
• Page Start: 1
• Page End: 7
• Publication Date: 2018-01
• Subjects: (SWCNT) Single walled carbon nanotube -- (BSIM) Berkeley short channel model -- (CMOS) Complementary metal oxide semiconductor -- (THz) Terahertz -- Hybrid circuit; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.09.016
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Hybrid CNT based amplifier performance at terahertz. To achieved wide impedance bandwidth up to 0.33-THz. Proposed circuit occupies less chip area. Noise figure of 0.4 dB is outstanding achievements. Power Measurement reveals highest PAE of 78%. Abstract: This work is focuses on terahertz performance of hybrid single walled carbon nanotube (CNT) based amplifier and proposed for measurement of soil parameters application. The proposed circuit topology provides hybrid structure which achieves wide impedance bandwidth of 0.33 THz within range of 1.07-THz to 1.42-THz with fractional amount of 28%. The single walled RF CNT network executes proposed ambition and proves its ability to resonant at 1.25-THz with analytical approach. Moreover, a RF based microstrip transmission line radiator used as compensator in the circuit topology which achieves more than 30 dB of gain. A proper methodology is chosen for achieves stability at circuit level in order to obtain desired optimal conditions. The fundamental approach optimizes matched impedance condition at (50+j0) Ω and noise variation with impact of series resistances for the proposed hybrid circuit topology and demonstrates the accuracy of performance parameters at the circuit level. The chip fabrication of the proposed circuit by using RF based commercial CMOS process of 45 nm which reveals promising results with simulation one. Additionally, power measurement analysis achieves highest output power of 26 dBm with power added efficiency of 78%. The succeed minimum noise figure from 0.6 dB to 0.4 dB is outstanding achievement for circuit topology at terahertz range. The chip area of hybrid circuit is 0.65 mm 2 and power consumption of 9.6 mW.