Study of NH3 flow duty-ratio in pulsed-flow epitaxial growth of non-polar a-plane Al0.34Ga0.66N films. (February 2019)

• Record Type: Journal Article
• Authors: He, Jiaqi; Zhang, Xiong; Zhao, Jianguo; Chen, Shuai; Wu, Zili; Fan, Aijie; Zhu, Youhua; Wang, Meiyu; Feng, Zhe Chuan; Hu, Guohua; Cui, Yiping
• Is Part Of: Materials science in semiconductor processing. Volume 90(2019)
• Page Start: 219
• Page End: 224
• Publication Date: 2019-02
• Subjects: Non-polar a-plane AlGaN epi-layers -- NH3 flow duty-ratio -- Pulsed-flow epitaxial growth; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2018.10.029
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The effects of the modulation in the NH3 flow duty-ratio in a three-way pulsed-flow epitaxial growth process on the structural and optical properties of non-polar a -plane Al0.34 Ga0.66 N epi-layers were studied intensively. It was revealed that the typical pyramidal defects originated from the anisotropy in growth rate could be evidently reduced with an optimized NH3 flow duty-ratio. In fact, the root-mean-square value determined with atomic force microscope was decreased from 12.8 to 3.1 nm when the NH3 flow duty-ratio was increased from 0 to 0.57. Moreover, the LO-phonon-assisted exciton emission observed in the photoluminescence (PL) spectrum was remarkably suppressed, and the linewidth of the near band edge PL emission peak was decreased by 47%, implying the significantly enhanced optical properties of the non-polar a -plane Al0.34 Ga0.66 N epi-layer.