Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength. (25th July 2016)

• Record Type: Journal Article
• Authors: Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Loke, Wan Khai; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia
• Is Part Of: Semiconductor science and technology. Volume 31:Number 9(2016:Sep.)
• Publication Date: 2016-07-25
• Subjects: germanium-tin -- avalanche photodiode -- multiple quantum well; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/31/9/095001
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We report the demonstration of a germanium-tin multiple quantum well (Ge0.9 Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μ m wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W −1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K −1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μ m wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.