Charge storage phenomenon derived from composition redistribution for single Hf0.8Si0.2Ox film after high-temperature treatment. (29th March 2016)

• Record Type: Journal Article
• Authors: Tang, Zhenjie; Li, Rong; Zhang, Xiwei; Hu, Dan
• Is Part Of: Semiconductor science and technology. Volume 31:Number 5(2016:May)
• Publication Date: 2016-03-29
• Subjects: charge trap memory -- high temperature annealing -- composition redistribution -- energy band diagram -- pulse laser deposition; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/31/5/055009
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Simple metal-Hf0.8 Si0.2 Ox -silicon capacitors have been fabricated. It is observed that the capacitor after high-temperature rapid thermal annealing treatment exhibits a significant charge storage phenomenon, with large hysteresis windows of 3.93 V in a ±8 V gate sweeping voltage range, faster operating speed and good data retention characteristics. The occurrence of charge memory should be attributed to the high-temperature treatment, which gives rise to the HfO2 crystallization and elemental composition redistribution in the Hf0.8 Si0.2 Ox film, forming a typical metal-oxide-high- κ -oxide-silicon memory structure. Therefore, the high-temperature treatment that induced the internal structure transformation is an appealing approach, and provides a guide for future charge-trap memory design.