AlGaAs ridge laser with 33% wall-plug efficiency at 100 °C based on a design of experiments approach. (1st March 2016)

• Record Type: Journal Article
• Authors: Fecioru, Alin; Boohan, Niall; Justice, John; Gocalinska, Agnieszka; Pelucchi, Emanuele; Gubbins, Mark A; Mooney, Marcus B; Corbett, Brian
• Is Part Of: Semiconductor science and technology. Volume 31:Number 4(2016:Apr.)
• Publication Date: 2016-03-01
• Subjects: semiconductor lasers -- high temperature -- TCAD -- AlGaAs -- simulation -- modelling; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/31/4/045002
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Upcoming applications for semiconductor lasers present limited thermal dissipation routes demanding the highest efficiency devices at high operating temperatures. This paper reports on a comprehensive design of experiment optimisation for the epitaxial layer structure of AlGaAs based 840 nm lasers for operation at high temperature (100 °C) using Technology Computer-Aided Design software. The waveguide thickness, Al content, doping level, and quantum well thickness were optimised. The resultant design was grown and the fabricated ridge waveguides were optimised for carrier injection and, at 100 °C, the lasers achieve a total power output of 28 mW at a current of 50 mA, a total slope efficiency 0.82 W A −1 with a corresponding wall-plug efficiency of 33%.