Cite
MLA Citation
Yun-Hsiang Wang et al.. “High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs.” Semiconductor science and technology, vol. 31, n.d., p. . http://access.bl.uk/ark:/81055/vdc_100062137272.0x000037