Cite
HARVARD Citation
Wang, Y. et al. (n.d.). High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs. Semiconductor science and technology. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Wang, Y. et al. (n.d.). High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs. Semiconductor science and technology. p. . [Online].