Density dependence of the saturated velocity in graphene. (6th October 2016)

• Record Type: Journal Article
• Authors: Ferry, D K
• Is Part Of: Semiconductor science and technology. Volume 31:Number 11(2016:Nov.)
• Publication Date: 2016-10-06
• Subjects: electron transport -- phonon scattering -- devices -- nanostructures; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/31/11/11LT02
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The saturated velocity of a semiconductor is an important measure in bench-marking performance for either logic or microwave applications. Graphene has been of interest for such applications due to its apparently high value of the saturated velocity. Recent experiments have suggested that this value is very density dependent and can even exceed the band limiting Fermi velocity. Some of these measurements have also suggested that the scattering is dominated by the low energy surface polar mode of the SiO2 substrate. Here, we show that the saturated velocity of graphene on SiO2 is relatively independent of the density and that the scattering is dominated by the high energy surface polar mode of the substrate.