Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy. (22nd June 2015)

• Record Type: Journal Article
• Authors: Wang, K; Wang, P; Pan, W W; Wu, X Y; Yue, L; Gong, Q; Wang, S M
• Is Part Of: Semiconductor science and technology. Volume 30:Number 9(2015:Sep.)
• Publication Date: 2015-06-22
• Subjects: InGaPBi -- dilute bismides -- molecular beam epitaxy -- broad PL spectrum; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/9/094006
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III–V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap.