Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers. (22nd June 2015)

• Record Type: Journal Article
• Authors: Marko, I P; Jin, S R; Hild, K; Batool, Z; Bushell, Z L; Ludewig, P; Stolz, W; Volz, K; Butkutė, R; Pačebutas, V; Geizutis, A; Krotkus, A; Sweeney, S J
• Is Part Of: Semiconductor science and technology. Volume 30:Number 9(2015:Sep.)
• Publication Date: 2015-06-22
• Subjects: bismides -- GaAsBi -- laser diodes -- recombination processes -- temperature performance -- epitaxy growth; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/9/094008
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: A combined growth approach involving both molecular-beam epitaxy and metal-organic vapor phase epitaxy has been developed to fabricate GaAsBi/GaAs-based quantum well (QW) laser structures with a Bi composition up to 8%. Lasing operation has been demonstrated at room temperature at 1.06 μ m in laser diodes containing 3QWs that in turn contain approximately 6% Bi. A 5QW device demonstrated lasing at 1.09 μ m at 80 K. Using temperature- and pressure-dependent measurements of stimulated emission as well as pure spontaneous emission measurements, we show that the threshold current of the devices is limited by non-radiative defect-related recombination and an inhomogeneous carrier distribution. This is suspected to be due to inhomogeneity of the QW width as well as non-uniform Bi composition in the active region.