Van der Waals epitaxial MOCVD-growth of (BixSb1−x)2Te3 (0 < x < 1) films. (28th July 2015)

• Record Type: Journal Article
• Authors: Bendt, G; Sonntag, J; Lorke, A; Assenmacher, W; Hagemann, U; Schulz, S
• Is Part Of: Semiconductor science and technology. Volume 30:Number 8(2015:Aug.)
• Publication Date: 2015-07-28
• Subjects: Van der Waals epitaxy -- MOCVD -- topological insulators -- thermoelectroic materials -- (BixSb1−x)2Te3; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/8/085021
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Epitaxial (Bi x Sb1− x )2 Te3 films with (0 < x < 1) were grown by the metal-organic chemical vapour deposition (MOCVD) process at 400 °C using the tailor-made precursors Et2 Te2, i -Pr3 Sb and Et3 Bi. The films grown on Al2 O3 (0001) substrates show a very smooth surface morphology as shown by a scanning electron microscope (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM), while those grown on Si(100) are rather polycrystalline. The chemical composition of the crystalline films (x-ray powder diffraction (XRD)) was investigated by energy-dispersive x-ray (EDX) and x-ray photoelectron spectroscopy (XPS), and the in-plane transport properties were measured, and a strong dependency from the bismuth content was found, which allows the tuning of the carrier concentration and mobility in a wide range.