Kinetics of catastrophic optical damage in GaN-based diode lasers. (9th June 2015)

• Record Type: Journal Article
• Authors: Hempel, Martin; Tomm, Jens W; Stojetz, Bernhard; König, Harald; Strauss, Uwe; Elsaesser, Thomas
• Is Part Of: Semiconductor science and technology. Volume 30:Number 7(2015:Jul.)
• Publication Date: 2015-06-09
• Subjects: diode laser -- gallium nitride -- degradation -- catastrophic optical damage; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/7/072001
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Catastrophic optical damage (COD) in 450 nm emitting InGaN/GaN diode lasers is artificially provoked by applying single sub-microsecond current pulses of increasing amplitude. Studying a batch of devices in which COD does not represent the main degradation mode, we find that COD is a 'hot' process. It becomes re-ignited in subsequent pulses. During the process, the spatial filamentation changes abruptly and the outer appearance of the damage pattern is predominantly created within the initial pulse. The process can cause material ejection out of the front facet as shown by thermography.