Growth and characterization of semi-polar (11-22) GaN on patterned (113) Si substrates. (18th May 2015)

• Record Type: Journal Article
• Authors: Bai, J; Yu, X; Gong, Y; Hou, Y N; Zhang, Y; Wang, T
• Is Part Of: Semiconductor science and technology. Volume 30:Number 6(2015:Jun.)
• Publication Date: 2015-05-18
• Subjects: gan -- semi-polar -- stacking faults; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/6/065012
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Patterned (113) Si substrates have been fabricated for the growth of (11-22) semi-polar GaN, which completely eliminates one of the great issues in the growth of semi-polar GaN on silicon substrates, 'Ga melting-back'. Furthermore, unlike any other mask patterning approaches which normally lead to parallel grooves along a particular orientation, our approach is to form periodic square window patterns. As a result, crack-free semi-polar (11-22) GaN with a significant improvement in crystal quality has been achieved, in particular, basal stacking faults (BSFs) have been significantly reduced. The mechanism for the defect suppression has been investigated based on detailed transmission electron microscopy measurements. It has been found that the BSFs can be impeded effectively at an early growth stage due to the priority growth along the 〈0001〉 direction. The additional 〈1-100〉 lateral growth above the masks results in a further reduction in dislocation density. The significant reduction in BSFs has been confirmed by low temperature photoluminescence measurements.