Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation. (16th April 2015)

• Record Type: Journal Article
• Authors: Kozlowski, Grzegorz; Corbett, Brian; Schulz, Stefan
• Is Part Of: Semiconductor science and technology. Volume 30:Number 5(2015:May)
• Publication Date: 2015-04-16
• Subjects: nitrides -- light-emitting diodes -- semi-polar; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/5/055014
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We present a theoretical study of the performance of InGaN-based light-emitting diodes in terms of built-in fields, wave function overlap, emission wavelength shift with current density and leakage currents. We analyze polar ( c -plane), semipolar ((11-22), (10-1-3), (20-21) and (20-2-1)) and non-polar systems. Compared with the c -plane, the semipolar planes show substantial improvements. An exceptionally high wave function overlap is expected for the (10-1-3) orientation, making it an attractive alternative to non-polar devices with low InN content. The (11-22) and (20-21) systems give rise to a natural carrier blocking layer, leading to significantly reduced leakage currents.