Background and interface electron populations in InAs0.58Sb0.42. (11th February 2015)

• Record Type: Journal Article
• Authors: Svensson, S P; Crowne, F J; Hier, H S; Sarney, W L; Beck, W A; Lin, Y; Donetsky, D; Suchalkin, S; Belenky, G
• Is Part Of: Semiconductor science and technology. Volume 30:Number 3(2015:Mar.)
• Publication Date: 2015-02-11
• Subjects: InAsSb -- Hall-effect -- doping; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/3/035018
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The unintentional background electron population and associated interface and surface conductivity in a heterostructure of InAs0.58 Sb0.42 with a bandgap of 0.144 eV and AlInSb was studied with multi-carrier Hall-effect analysis. A free electron bulk concentration at 77 K was found with a density of 2.4 × 10 15 cm −3 and mobility of 140 000 cm 2 V −1 s −1 . A surface electron accumulation layer was observed with a density of 5.5 × 10 11 cm −2 and mobility of 4500 cm 2 V −1 s −1 that is consistent with predictions of surface Fermi level pinning. Another accumulation layer was identified at the interface with the AlInSb of 4 × 10 11 cm −2 with a mobility of 37 000 cm 2 V −1 s −1 . The origin of the defects and the implications for device structures are discussed.