Cite
APA Citation
Yang, X., Yu, J., Chen, X., Peng, Y., Hu, X., Xu, X., Yang, X., Song, Y., & Wang, R. (2018). basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods. CrystEngComm, 20(43), 6957–6962. http://access.bl.uk/ark:/81055/vdc_100072131060.0x000051