Cite
HARVARD Citation
Yang, X. et al. (2018). Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods. CrystEngComm. 20 (43), pp. 6957-6962. [Online].
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Yang, X. et al. (2018). Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods. CrystEngComm. 20 (43), pp. 6957-6962. [Online].