Cite
HARVARD Citation
Mckenzie, T. et al. (2006). A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison. International journal of computational science and engineering. pp. 144-147. [Online].
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Mckenzie, T. et al. (2006). A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison. International journal of computational science and engineering. pp. 144-147. [Online].