Cite
MLA Citation
Weiwei Hu et al.. “A low resistivity n++-InGaN/p++-GaN polarization-induced tunnel junction.” Journal of physics, vol. 49, 2016, p. . http://access.bl.uk/ark:/81055/vdc_100065607376.0x00002e
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Weiwei Hu et al.. “A low resistivity n++-InGaN/p++-GaN polarization-induced tunnel junction.” Journal of physics, vol. 49, 2016, p. . http://access.bl.uk/ark:/81055/vdc_100065607376.0x00002e