Cite
HARVARD Citation
Hu, W. et al. (2016). A low resistivity n++-InGaN/p++-GaN polarization-induced tunnel junction. Journal of physics. p. . [Online].
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Hu, W. et al. (2016). A low resistivity n++-InGaN/p++-GaN polarization-induced tunnel junction. Journal of physics. p. . [Online].