Photoconductivity relaxation processes in Cu1−xZnxInS2 solid solutions. (November 2015)

• Record Type: Journal Article
• Authors: Bozhko, V.V.; Novosad, A.V.; Parasyuk, O.V.; Vainorius, N.; Vertelis, V.; Nekrošius, A.; Kažukauskas, V.
• Is Part Of: Materials science in semiconductor processing. Volume 39(2015:Nov.)
• Page Start: 665
• Page End: 670
• Publication Date: 2015-11
• Subjects: 72.20 -- 72.40 -- 72.80 -- 73.20; Cu1−xZnxIn2S4 solid solutions -- Photoconductivity -- Relaxation -- Recombination centers; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.06.007
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Photoconductivity and its relaxation in Cu1− x Zn x In2 S4 alloys ( x =0–16) single crystals were investigated in the temperature range 30–100 K. The long-lasting relaxation processes ( τ ~10 3 s) and induced photoconductivity phenomena were identified. The main parameters characterizing the photoconductivity kinetic were determined. The observed phenomena were analyzed by taking into account effects of the trapping levels. It is shown that relaxation of the photoconductivity and induced photoconductivity are controlled by the multicenter recombination in which both 'fast' and 'slow' recombination centers take part.