Influence of deposition time on the properties of electrodeposited Cu(In, Al)Se2 thin films. (November 2015)

• Record Type: Journal Article
• Authors: Deepa, K.G.; Jampana, Nagaraju
• Is Part Of: Materials science in semiconductor processing. Volume 39(2015:Nov.)
• Page Start: 453
• Page End: 456
• Publication Date: 2015-11
• Subjects: Electrodeposition -- Thin films -- Solar energy materials -- Thickness; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.05.050
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Cu(In, Al)Se2 films are grown using single step electrodeposition technique. The film properties are studied by varying the deposition time from 500 to 2000 s. Peaks corresponding to elemental Se and Cu2 Se phase started appearing from 1200 s of deposition. The composition is changed significantly after 1500 s. Se concentration increased from 57 to 68% with the increase in the deposition time. The Cu2 Se phase is dominant in the films deposited for a duration of 2000 s and the grain size increased from 1.12 to 2.15 μm in this film. Raman analysis confirmed the presence of Se and Cu2 Se phase in C1200. In C1500 and C2000 the spectra showed prominent mode corresponding to Cu2 Se. The thickness of the film increased from 0.85 to 2.3 μm with the increase in the deposition time. All the films showed p-type conductivity and resistivity reduced with increased thickness.