An Na source via MoNa intermediate layer for three-stage evaporation of Cu(in, Ga)Se2 solar cells. (November 2015)

• Record Type: Journal Article
• Authors: Sung, Huan-Hsin; Tsai, Du-Cheng; Chang, Zue-Chin; Liang, Shih-Chang; Shieu, Fuh-Sheng
• Is Part Of: Materials science in semiconductor processing. Volume 39(2015:Nov.)
• Page Start: 79
• Page End: 83
• Publication Date: 2015-11
• Subjects: SIMS -- CIGS solar cell -- MoNa thin film; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.04.037
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this study, an Na source was integrated into the back contact stack, which is a MoNa layer. MoNa layers with varying thicknesses were deposited on Al2 O3 substrate as intermediate layers of an Mo back contact by DC magnetron sputtering of a Mo-10 at% Na target. We examined the effect of MoNa thickness on the standard production of Cu(In, Ga)Se2 (CIGS) solar cell fabricated using three-stage evaporation. The structure of the MoNa layer was composed of fibers with considerably small grain size (~5 nm). By contrast, the Mo layer presented a columnar structure with relatively large grain size. The Na concentration in the CIGS absorber can be adjusted by varying the thickness of the MoNa layer. Cell efficiency was heavily raised from 2.08% to 11.7% using MoNa layer as Na source. However, the enhanced deliquescence property with MoNa thickness limited further improvement in cell efficiency.