Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures. (November 2015)

• Record Type: Journal Article
• Authors: Turut, A.; Karabulut, A.; Ejderha, K.; Bıyıklı, N.
• Is Part Of: Materials science in semiconductor processing. Volume 39(2015:Nov.)
• Page Start: 400
• Page End: 407
• Publication Date: 2015-11
• Subjects: Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.05.025
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2 O3 / n -GaAs structure. The Al2 O3 layer of about 5 nm was formed on the n -GaAs by atomic layer deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were obtained from the forward-bias ln I vs V plot at 300 K. The BH value of 1.18 eV is larger than the values reported for conventional Ti/ n -GaAs or Au/Ti/ n -GaAs diodes. The barrier modification is very important in metal semiconductor devices. The use of an increased barrier diode as the gate can provide an adequate barrier height for FET operation while the decreased barrier diodes also show promise as small signal zero-bias rectifiers and microwave. The experimental capacitance and conductance characteristics were corrected by taking into account the device series resistance R s . It has been seen that the non-correction characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range rather than the forward bias voltage range because the phase angle in the reverse bias has remained unchanged as 90° independent of the measurement frequency.