Carbon ions irradiation induced modifications in structural and electrical resistivity characteristics of ZrN thin films. (November 2015)

• Record Type: Journal Article
• Authors: Khan, Shakil; Ahmed, Ishaq; Khalid, Noaman; Mehmood, Mazhar; Waheed, Abdul; Malik, Maaza
• Is Part Of: Materials science in semiconductor processing. Volume 39(2015:Nov.)
• Page Start: 530
• Page End: 535
• Publication Date: 2015-11
• Subjects: Carbon ions irradiation -- ZrN -- Cathodic arc ion -- XRD -- Electrical resistivity; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.05.062
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Zirconium nitride (ZrN) thin films are irradiated with 800 keV energetic carbon (C) ions in a 5UDH-Pelletron accelerator and the ions irradiation induced effects are investigated. The films are irradiated at various C ions fluences, ranging from 10 13 to 10 15 ions/cm 2 . The scanning electron microscopy study of the films indicates the development of zirconium (Zr) nanoparticles at ions irradiated region. X-ray diffraction (XRD) patterns of C ions irradiated films also show the formation of (100) and (002) oriented nanocrystalline metallic Zr phases. The irradiated films spectra depict a shift in ZrN peaks towards higher 2 θ values, exhibiting that C ions bombardment induces compressive stress in the irradiated films. The appearance of C related peaks in Fourier transform infrared (FTIR) spectra confirms the incorporation of C atoms into ZrN film. Compressive stress has been calculated from the IR peak shift which indicates that higher ion dose (≥5×10 14 ions/cm 2 ) produce lower compressive stress relative to the lower ions fluences. Effect of ion dose on the film resistivity is also reported.