Effect of terbium doping on structural, optical and gas sensing properties of In2O3 nanoparticles. (November 2015)

• Record Type: Journal Article
• Authors: Anand, Kanica; Kaur, Jasmeet; Singh, Ravi Chand; Thangaraj, Rengasamy
• Is Part Of: Materials science in semiconductor processing. Volume 39(2015:Nov.)
• Page Start: 476
• Page End: 483
• Publication Date: 2015-11
• Subjects: Rare earth -- Doping -- In2O3 -- Sensor Response; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.05.042
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this work, the effect of terbium (Tb 3+ ) as dopant on the structural, optical, electrical and gas sensing properties of In2 O3 (indium oxide) nanoparticles has been discussed. In2 O3 and Tb 3+ -doped In2 O3 nanoparticles were synthesized by a facile and cost effective co-precipitation method. XRD analysis revealed the formation of bixbyite-type cubic phase for In2 O3 and Tb 3+ -doped In2 O3 nanoparticles which was further supported by Raman studies. It was observed that the crystallite size of In2 O3 nanoparticles decreased, while structural disorder increased with increase in Tb 3+ concentration. SEM micrographs showed that particles were spherical in shape and EDS corroborated the presence of Tb 3+ in doped In2 O3 nanoparticles. A broadening and shifting of Raman peaks with increase in Tb 3+ content was also observed. For gas sensing characteristics, the nanoparticles were applied as thick film onto the alumina substrate and tested at different operating temperatures for various volatile organic compounds (such as methanol, ethanol, acetone) and ammonia. The results indicated that the sensor based on 5%Tb 3+ -doped In2 O3 nanoparticles presented much higher sensor response to 50ppm ethanol at 300 °C temperature than the pure In2 O3 sensor. The enhancement of the response may be attributed to high surface basicity, small size and large lattice distortion of doped In2 O3 sensor.