Stability and morphology-dependence of Sc3+ ions incorporation and substitution kinetics within ZnO host lattice. (November 2015)

• Record Type: Journal Article
• Authors: Yumak, Ayşe; Turgut, Güven; Kamoun, Olfa; Ozisik, Haci; Deligoz, Engin; Petkova, Petya; Mimouni, Refka; Boubaker, Karem; Amlouk, Mosbah; Goumri-Said, Souraya
• Is Part Of: Materials science in semiconductor processing. Volume 39(2015:Nov.)
• Page Start: 103
• Page End: 111
• Publication Date: 2015-11
• Subjects: Zinc oxide -- Scandium -- Optical properties -- Single oscillator model -- Urbach tailing -- Dielectric constant -- Amlouk–Boubaker opto-thermal expansivity ψAB; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.04.010
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this study, sol–gel spin coating route was carried out to prepare Scandium doped ZnO thin films with different controlled percentage (1–7%). Particularly, it has been demonstrated, through original conjoint morphological-structural and optical investigations, that some interesting physical properties were induced. Indeed, X-ray diffraction (XRD) analysis shows that (002) preferential crystalline plane for Sc doped ZnO films was kept along with ZnO hexagonal würtzite structure, although Sc doping seemed to cause a decrease in crystallinity. Except for 1 at% Sc doping ratio, optical band gap changes reversely with Urbach energy with a decrease in optical gap and a broadening of the absorption tail. Ab-initio calculations of lattice dynamical properties outlined additional strong hybridization between Sc and O atoms and show the stability of Scandium doped ZnO.