EPR and Raman study of silicon layers obtained by gas detonation spraying. (15th November 2017)

• Record Type: Journal Article
• Authors: Klyui, N.I.; Bratus, V.Ya.; Temchenko, V.P.; Lozinskii, V.B.; Yukhymchuk, V.O.; Han, Wei; Liu, Bingbing
• Is Part Of: Materials science in semiconductor processing. Volume 71(2017)
• Page Start: 232
• Page End: 239
• Publication Date: 2017-11-15
• Subjects: Silicon layer -- Gas detonation spraying -- Defect -- EPR -- Raman spectroscopy; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.08.006
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: We demonstrate availability of gas detonation deposition spraying (GDS) to obtain silicon layers that can be used for production of solar cells. Silicon powder remaining as secondary raw material of silicon and/or silicon production is used during GDS. To study defects and structural perfection of initial powders and obtained layers, electron paramagnetic resonance (EPR) and Raman spectroscopy are used. It is shown that one part of EPR spectra displays resonances originating from different nearest-neighbor configurations of silicon dangling bonds, whereas an increase of the total number of paramagnetic defects in GDS silicon layer is related to the rise of conduction electrons or electrons filled band tail states. Thermal annealing of layers in hydrogen ambience further reduces the number of silicon dangling bonds owing to their passivation. Based on the results of X-ray diffraction, EPR and Raman spectroscopy it is assumed that the GDS Si layers are composed of randomly oriented and partially oxidized monocrystalline silicon grains. It is found that optical and photoelectric properties of the layers obtained indicate a possibility to apply them for solar cells production. Graphical abstract: Highlights: Study of gas detonation deposited Si layers promising for Si-based solar cells. Decreasing of Si dangling bonds concentration in the Si layers after deposition and annealing in H2 . Optical and photoelectric properties of the Si layers are suitable for solar cells fabrication.