The deformation pattern of single crystal β-Ga2O3 under nanoindentation. (15th November 2017)

• Record Type: Journal Article
• Authors: Wu, Y.Q.; Gao, S.; Huang, H.
• Is Part Of: Materials science in semiconductor processing. Volume 71(2017)
• Page Start: 321
• Page End: 325
• Publication Date: 2017-11-15
• Subjects: Semiconductor -- Gallium oxide -- Nanoindentation -- Deformation; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.08.019
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The deformation of single crystal beta gallium oxide (β-Ga2 O3 ) under nanoindenting was investigated using transmission electron microscopy. The deformation pattern of β-Ga2 O3 was found to follow a certain route with the increased indentation load: (i) stacking faults along the (200) lattice planes and twinning structures with ( 2 ̅ 01) plane as twin boundary, (ii) dislocations on (101) lattice planes and (iii) lattice bending and cracking. Such a deformation pattern is unique, significantly different from that of Si and other semiconductor materials.