Synthesis of highly selective and sensitive Cu-doped ZnO thin film sensor for detection of H2S gas. (15th November 2017)

• Record Type: Journal Article
• Authors: Nimbalkar, Amol R.; Patil, Maruti G.
• Is Part Of: Materials science in semiconductor processing. Volume 71(2017)
• Page Start: 332
• Page End: 341
• Publication Date: 2017-11-15
• Subjects: ZnO -- H2S gas -- XPS -- Stability -- Selectivity; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.08.022
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Copper (Cu) doped zinc oxide (ZnO) thin films were successfully prepared by a simple sol-gel spin coating technique. The effect of Cu doping on the structural, morphology, compositional, microstructural, optical, electrical and H2 S gas sensing properties of the films were investigated by using XRD, FESEM, EDS, FTIR, XPS, Raman, HRTEM, and UV–vis techniques. XRD analysis shows that the films are nanocrystalline zinc oxide with the hexagonal wurtzite structure and FESEM result shows a porous structured morphology. The gas response of Cu-doped ZnO thin films was measured by the variation in the electrical resistance of the film, in the absence and presence of H2 S gas. The gas response in relation to operating temperature, Cu doping concentration, and the H2 S gas concentration has been systematically investigated. The maximum H2 S gas response was achieved for 3 at% Cu-doped ZnO thin film for 50 ppm gas concentration, at 250 °C operating temperature.