A study of S doped ZnSb. (15th November 2017)

• Record Type: Journal Article
• Authors: Song, X.; Finstad, T.G.
• Is Part Of: Materials science in semiconductor processing. Volume 71(2017)
• Page Start: 421
• Page End: 426
• Publication Date: 2017-11-15
• Subjects: Zinc antimonide -- Sulfur solubility -- Electrical properties -- Hole mobility -- Neutral scattering; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.09.007
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: We report on S-doping of ZnSb for S concentrations ranging from 0.02 at% to 2.5 at%. There are no previous reports on S-doping. ZnSb is a thermoelectric material with some advantages for the temperature range 400 K–600 K. The solid solubility of S in ZnSb was estimated to be lower than 0.1% from observations of precipitates by scanning microscopy. Hall and Seebeck measurements were performed as a function of temperature from 6 K to 623 K. The temperature dependence of the electrical properties suggests that S introduces neutral scattering centers for holes in the p-type material. An increase in hole concentration by S is argued by defect reactions involving Zn vacancies.