Hydrogen dilution on an undoped silicon oxide layer and Its application to amorphous silicon thin-film solar cells. (January 2016)
- Record Type:
- Journal Article
- Title:
- Hydrogen dilution on an undoped silicon oxide layer and Its application to amorphous silicon thin-film solar cells. (January 2016)
- Main Title:
- Hydrogen dilution on an undoped silicon oxide layer and Its application to amorphous silicon thin-film solar cells
- Authors:
- Chen, Yu-Hung
Lin, Chen-Cheng
Liu, Yung-Tsung
Lu, Hsin-Wei
Liu, Jun-Chin - Abstract:
- Abstract: This paper proposes the use of undoped hydrogenated microcrystalline silicon oxide (μc-SiO x :H) deposited on an n-μc-Si:H layer of amorphous silicon single-junction superstrate-configuration thin-film solar cells produced using 40 MHz very high frequency plasma-enhanced chemical vapor deposition. We found that undoped μc-SiO x :H thin film under optimized hydrogen dilution conditions had high crystallinity, high conductivity, a wide optical band gap, and a high refractive index, which are advantageous properties in solar cells. However, deposition at higher hydrogen dilutions degraded the quality and optoelectronic properties of the films, because the morphology of the films changed from microcrystalline to amorphous. These results suggest that the use of an optimized undoped μc-SiO x :H layer improves a-Si:H thin-film solar cell performance through enhancement of the short-circuit current density J sc . The increased J sc can be attributed to an improved light-trapping capability in the long wavelength range, between 620 and 680 nm, as demonstrated by the external quantum efficiency. This technique also allows optimal conversion efficiency to be achieved. The results demonstrated that hydrogen dilution plays a dominant role in the improvement of film quality and solar cell performance; however, the tradeoff between refractive index and conductivity must be considered.
- Is Part Of:
- Materials science in semiconductor processing. Volume 41(2016:Jan.)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 41(2016:Jan.)
- Issue Display:
- Volume 41 (2016)
- Year:
- 2016
- Volume:
- 41
- Issue Sort Value:
- 2016-0041-0000-0000
- Page Start:
- 312
- Page End:
- 316
- Publication Date:
- 2016-01
- Subjects:
- Silicon oxide -- Light-trapping -- Solar cell
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2015.09.024 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 8079.xml